TC58BVG2S0HBAI4

Toshiba Memory America, Inc.

TC58BVG2S0HBAI4
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See Product Specifications for product details.
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Part No. TC58BVG2S0HBAI4
Manufacturer Toshiba Memory America, Inc.
Description IC FLASH 4G PARALLEL 63TFBGA
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Reference Price
(In US Dollars)
1 pcs10 pcs25 pcs50 pcs
$5.34$4.873$4.78$4.747
210 pcs420 pcs630 pcs1050 pcs
$4.259$4.242$3.978$3.808
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$5.34

Specifications

Data sheet

Write Cycle Time - Word, Page:25ns
Voltage - Supply:2.7 V ~ 3.6 V
Technology:FLASH - NAND (SLC)
Supplier Device Package:63-TFBGA (9x11)
Series:Benand™
Packaging:Tray
Package / Case:63-VFBGA
Other Names:ASTC58BVG2S0HBAI4
TC58BVG2S0HBAI4JDH
TC58BVG2S0HBAI4YCL
TC58BVG2S0HBAIJDH
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):3 (168 Hours)
Memory Type:Non-Volatile
Memory Size:4Gb (512M x 8)
Memory Interface:Parallel
Memory Format:FLASH
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:FLASH - NAND (SLC) Memory IC 4Gb (512M x 8) Parallel 25ns 63-TFBGA (9x11)
Access Time:25ns
Email:info@atechelec.com

Introduce

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