BDV65B

AMI Semiconductor / ON Semiconductor

BDV65B
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Part No. BDV65B
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN DARL 100V 10A TO-218
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
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Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):100V
Vce Saturation (Max) @ Ib, Ic:2V @ 20mA, 5A
Transistor Type:NPN - Darlington
Supplier Device Package:SOT-93
Series:-
Power - Max:125W
Packaging:Tube
Package / Case:TO-218-3
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Contains lead / RoHS non-compliant
Frequency - Transition:-
Detailed Description:Bipolar (BJT) Transistor NPN - Darlington 100V 10A 125W Through Hole SOT-93
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 5A, 4V
Current - Collector Cutoff (Max):1mA
Current - Collector (Ic) (Max):10A
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