FCP190N65S3

AMI Semiconductor / ON Semiconductor

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Part No. FCP190N65S3
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 650V 17A TO220-3
Lead Free Status / RoHS Status
In stock 800 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs800 pcs1600 pcs
$3.25$2.933$2.357$1.655$1.519
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$3.25

Specifications

Data sheet

Vgs(th) (Max) @ Id:4.5V @ 1.7mA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220-3
Series:SuperFET® III
Rds On (Max) @ Id, Vgs:190 mOhm @ 8.5A, 10V
Power Dissipation (Max):144W (Tc)
Package / Case:TO-220-3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):Not Applicable
Input Capacitance (Ciss) (Max) @ Vds:1350pF @ 400V
Gate Charge (Qg) (Max) @ Vgs:33nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):650V
Detailed Description:N-Channel 650V 17A (Tc) 144W (Tc) Through Hole TO-220-3
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Email:info@atechelec.com

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