FDI33N25TU

AMI Semiconductor / ON Semiconductor

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Part No. FDI33N25TU
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 250V 33A I2PAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Vgs(th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:I2PAK (TO-262)
Series:UniFET™
Rds On (Max) @ Id, Vgs:94 mOhm @ 16.5A, 10V
Power Dissipation (Max):235W (Tc)
Packaging:Tube
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:2135pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:48nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):250V
Detailed Description:N-Channel 250V 33A (Tc) 235W (Tc) Through Hole I2PAK (TO-262)
Current - Continuous Drain (Id) @ 25°C:33A (Tc)
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