GP1M010A080N

Global Power Technologies Group

GP1M010A080N
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Part No. GP1M010A080N
Manufacturer Global Power Technologies Group
Description MOSFET N-CH 900V 10A TO3PN
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-3PN
Series:-
Rds On (Max) @ Id, Vgs:1.05 Ohm @ 5A, 10V
Power Dissipation (Max):312W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-3P-3, SC-65-3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:2336pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:53nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):900V
Detailed Description:N-Channel 900V 10A (Tc) 312W (Tc) Through Hole TO-3PN
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Email:info@atechelec.com

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