MJE802G

AMI Semiconductor / ON Semiconductor

MJE802G
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Part No. MJE802G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN DARL 80V 4A TO225AA
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Reference Price
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1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.62$0.534$0.399$0.313$0.242
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Target Price:(USD)
Quantity:
Total:
$0.62

Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):80V
Vce Saturation (Max) @ Ib, Ic:2.5V @ 30mA, 1.5A
Transistor Type:NPN - Darlington
Supplier Device Package:TO-225AA
Series:-
Power - Max:40W
Packaging:Bulk
Package / Case:TO-225AA, TO-126-3
Other Names:MJE802GOS
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:2 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:-
Detailed Description:Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole TO-225AA
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 1.5A, 3V
Current - Collector Cutoff (Max):100µA
Current - Collector (Ic) (Max):4A
Base Part Number:MJE802
Email:info@atechelec.com

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